Details
- Single lane
- Compact reactor
- Dynamic etching
- Up to 30% F2 concentration
- Multi-zone heating
- Integrated N2 dilution panel
- Total flow up to 35 slm
- Typical etching process time: <1min per 1um @ 10%, up to 3.4um/min
- Scalable platform; Reactor design and sized of 1000 w/h using 100% F2
- Easy process transition to industrial (multi-lanes) version of the tool (Lab to Fab)
Development Applications
- Front side Texturing / Black Silicon / nano and micro textures
- Mc-Si Diamond wire cut wafer texturing
- Cast wafers and epitaxial wafers texturing
- Solar cell with no ARC layer
- Emitter etch back & Selective emitter scheme
- Pattern etching / selective etching
- Back side emitter removal & flattening
- Saw damage removal
- PSG removal
- Simplified PERC process
- Porous layer gettering
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