R&D tool
The 9s-ADE100 is a small footprint, flexible process development platform. It is built around a single ADE reactor. This reactor is similar to the one used in the industrial version of the tool, greatly facilitating the transition from laboratory development to production.
The tool can be fitted with automated loader/unloader in order to provide higher throughput. It is user friendly, and can be started very quickly, with typical etching / texturing process time duration of less than a minute. No vacuum nor plasma required, this dry etching tool is different from Reactive Ion Etching (RIE) tools. It is most relevant for all dry etching R&D work that needs to be compatible with low COO, high throughput industrial process.
> UNIVERSAL, FUTURE PROOF DRY ETCHING
Universal silicon etching/texturing solution. Enables the use of diamond wire cut wafers, epitaxial wafers, cast wafers, mono and multi crystalline. Also suitable for Si deposited layers, like amorphous silicon (a-Si) and polysilicon layers.
> Scalable platform : Lab to Fab
Easy process transition to industrial (multi-lanes) version of the tool
> Quick startup - Easy maintenance
Once the tool is at process temperature, the process can start and it will deliver stable results immediatly. The process gases are accurately controlled by Mass Flow Meters. As soon as the wafers come out of the tool, they can be used for the next processing step; Quick and efficient etching, for either just a few wafers, or larges batches ! The tool is also designed for easy maintenance and acces to the chemical reactor.
> Multiple Development & Applications
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Front side Texturing / Black Silicon / nano and micro textures
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Single side etching / texturing
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Mc-Si Diamond wire cut wafer texturing
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Single side Amorphous silicon (a-Si) removal for TOPCON cells
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Cast wafers, UMG, epitaxial wafers texturing
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Development of Solar cell without ARC layer
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Thin film etching / texturing
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Emitter etch back & Selective emitter scheme
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Pattern etching / selective etching
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Back side emitter removal & flattening
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Saw damage removal
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Simplified PERC process
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Porous layer gettering
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- Single lane, soft handling, non-metallic wafer conveyor
- Dynamic etching, Multi-zone heating, low temperature process
- Total flow up to 35 slm; Up to 30% F2 concentration; Integrated N2 dilution panel
- Typical c-Si etching rate: <1min per 1um @ 10%, up to 3.4um/min
> Compact footprint
* Shown with fully automated loaders
